Notebook RAM
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- 8GB DDR4 2666Mhz
- CL 19 Cycles
- Power Supply: VDD=1.2V Typical
- Latency: 19-19-19
RM219.00
- 16GB DDR4 2666Mhz
- CL 19 Cycles
- Power Supply: VDD=1.2V Typical
- Latency: 19-19-19
RM389.00
- 4GB DDR4 3200Mhz
- CL 22 Cycles
- Power Supply: VDD=1.2V Typical
- Latency: 22-22-22
RM129.00
- 8GB DDR4 3200Mhz
- CL 22 Cycles
- Power Supply: VDD=1.2V Typical
- Latency: 22-22-22
RM219.00
- 16GB DDR4 3200Mhz
- CL 22 Cycles
- Power Supply: VDD=1.2V Typical
- Latency: 22-22-22
RM399.00
- High speed up to 2666MHz
- Energy efficient: saves 20% power compared to DDR3
- High-quality PCB provides improved signal transfer and system stability
- Supports Intel Skylake and Coffee Lake platforms, future-proof for Kaby Lake & Cannon Lake platforms
RM189.00
- Frequency: 2666MHz
- Capacity: 4GB
- Voltage: 1.2V
- Cas Latency: CL19
- Pin: 260-pin
- Certificate: RoHS, CE, FCC, RCM, VCCI, JEDEC
- Package: Single Channel Package
RM109.00
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
RM389.00
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
RM129.00
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V
- TypicalNominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
RM219.00